PJA3476 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJA3476
100V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
100 V Current 300mA
SOT-23
Features
 RDS(ON) , VGS@10V, ID@300mA<6Ω
 RDS(ON) , VGS@4.5V, ID@200mA<9Ω
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 ESD Protected 2KV HBM
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0003 ounces, 0.0084 grams
 Marking: A76
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
100
+20
300
800
500
4
-55~150
250
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
June 10,2015-REV.00
Page 1