PJA3432 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJA3432
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current
1.6A
SOT-23
Features
 RDS(ON) , VGS@4,5V, ID@1.6A<200mΩ
 RDS(ON) , VGS@2.5V, ID@1.1A<270mΩ
 RDS(ON) , VGS@1.8V, ID@0.2A<570mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0003 ounces, 0.0084 grams
 Marking: A32
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
30
+8
1.6
6.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
January 22,2015-REV.02
Page 1