|
PJA3419 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V P-Channel Enhancement Mode MOSFET– ESD Protected | |||
|
PPJA3419
20V P-Channel Enhancement Mode MOSFETâ ESD Protected
Voltage
-20 V Current
-4.0A
SOT-23
Features
ï¬ RDS(ON) , VGS@-10V, ID@-4.0A<60mâ¦
ï¬ RDS(ON) , VGS@-4.5V, ID@-3.3A<70mâ¦
ï¬ RDS(ON) , VGS@-2.5V, ID@-2.0A<96mâ¦
ï¬ Advanced Trench Process Technology
ï¬ Specially Designed for Switch Load, PWM Application, etc.
ï¬ ESD Protected 2KV HBM
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case : SOT-23 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight : 0.0003 ounces, 0.0084 grams
ï¬ Marking : A19
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-4.0
-16
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
May 8,2015-REV.00
Page 1
|
▷ |