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PJA3416AE Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET – ESD Protected | |||
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PPJA3416AE
20V N-Channel Enhancement Mode MOSFET â ESD Protected
Voltage
20 V Current
6.5A
SOT-23
Features
ï¬ RDS(ON) , VGS@4.5V, ID@6.5A<22mâ¦
ï¬ RDS(ON) , VGS@2.5V, ID@5.5A<26mâ¦
ï¬ RDS(ON) , VGS@1.8V, ID@5.0A<34mâ¦
ï¬ Advanced Trench Process Technology
ï¬ Specially Designed for Switch Load, PWM Application, etc.
ï¬ ESD Protected 2KV HBM
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: SOT-23 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0003 ounces, 0.0084 grams
ï¬ Marking: A6E
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
20
+8
6.5
32
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
July 14,2015-REV.00
Page 1
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