PJA3412 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET

PPJA3412
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
4.1A
Features
 RDS(ON) , VGS@4.5V, ID@4.1A<56mΩ
 RDS(ON) , VGS@2.5V, ID@2.8A<68mΩ
 RDS(ON) , VGS@1.8V, ID@1.5A<95mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0003 ounces, 0.0084 grams
 Marking: A12
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
20
+12
4.1
16.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
March 10,2014-REV.00
Page 1