PJA138K_14 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 50V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJA138K
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
50 V
Current 500mA
SOT-23
Features
 RDS(ON) , VGS@10V, ID@500mA<1.6Ω
 RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω
 RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω
 Advanced Trench Process Technology
 Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers: Relay, Displays, Memories, etc.
 ESD Protected 2KV HBM
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0003 ounces, 0.0084 grams
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_A=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
50
+20
500
1200
500
4
-55~150
250
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
November 13,2014-REV.02
Page 1