PJ4N3KDW_13 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected

PJ4N3KDW
30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R , V @2.5V,I @1mA=7.0
DS(ON) GS
DS
• R_DS(ON), V_GS@4.0V,I_DS@10mA=5.0
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• The MOSFET elements are independent,eliminating interference
• Mounting cost and area can be cut in half
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems,Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Low voltage drive (2.5V) makes this device ideal for portable
equipment
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Weight: 0.0002 ounces, 0.006 grams
• Marking : 4N3
SOT-23
Absolute Maximum Ratings (T =25OC )
A
Parameter
Drain-Source Voltage
Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Current ⁽¹⁾
Maximum power Dissipation
TA =2 5 ^OC
TA =7 5 ^OC
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
Junction-to Ambient Thermal Resistance
(PCB mounted)²
S ymb o l
VDS
V GS
ID
I DM
PD
TJ,TSTG
RJA
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
Limit
30
+ 20
100
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
O_C
O_{C /W}
October 23,2013-REV.04
PAGE . 1