PJ2306_15 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 30V N-Channel Enhancement Mode MOSFET-ESD Protected

PPJ2306
30V N-Channel Enhancement Mode MOSFET-ESD Protected
Features
 RDS(ON), VGS@10V,IDS@3.2A=65m
 RDS(ON), VGS@4.5V,IDS@2.8A=85m
 Advanced Trench Process Technology
 High Density Cell Design For Ultra Low On-Resistance
 Very Low Leakage Current In Off Condition
 Specially Designed for Load Switch, PWM Applications
 ESD Protected
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std..(Halogen Free)
Mechanical Data
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
 Case: SOT-23 Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0003 ounces, 0.084 grams
 Marking: 06
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
T_A=25^oC
T_A=75^oC
Operating Junction and Storage Temperature Range
Junction to Ambient Thermal Resistance (PCB mounted)²
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
Note:1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
LIMIT
30
+20
3.2
16
1.25
0.75
-55 to +150
100
UNITS
V
V
A
A
W
W
o_C
o_C/W
March 24,2015-REV.01
Page 1