PJ2306 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 30V N-Channel Enhancement Mode MOSFET - ESD Protected

PJ2306
30V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R_DS(ON), V_GS@10V,I_DS@3.2A=65mΩ
• R_DS(ON), V_GS@4.5V,I_DS@2.8A=85mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Load Switch, PWM Applications
• ESD Protected
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 06
D
3
1
2
G
S
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
S ym b o l
Limit
Drain-Source Voltage
V _DS
30
Gate-Source Voltage
V _GS
+20
Continuous Drain Current
I_D
3.2
Pulsed Drain Current ¹⁾
Maxi mum P ower Di ssi pati on
T_A = 2 5 ^OC
T_A = 7 5 ^OC
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
I_DM
P_D
T _J , T _{S TG}
16
1.25
0.75
-55 to + 150
Junction-to Ambient Thermal Resistance(PCB mounted)²
R _{θJ A}
100
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
Uni ts
V
V
A
A
W
O_C
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
June 03, 2010-REV.00
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