PJ1870 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 20V Common-Drain Dual N-Channel MOSFET-ESD Protected

PJ1870
20V Common-Drain Dual N-Channel MOSFET-ESD Protected
FEATURES
• R_DS(ON), V_GS@4.5V,I_DS@6.5A=19mΩ
• R_DS(ON), V_GS@3.5V,I_DS@6.0A=21mΩ
• R_DS(ON), V_GS@2.5V,I_DS@5.5A=27mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for Li-lon or Li-Polymer battery packs
• ESD Protected 1.5KV HBM
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
• Case: TSSOP-8 plastic case.
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 1870
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
Symbol
V_DS
V_GS
I_D
T_A = 25^oC
T_A = 75^oC
I_DM
P_D
T_J, T_STG
R_θJA
Limit
20
+ 12
6
30
1.5
0.9
-55 to 150
83
Unit
V
V
A
A
W
o_C
o_C/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-MAR.29.2006
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