MMBTA92 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP high-voltage transistor

MMBTA92
PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE 300 Volts POWER 225 mWatts
FEATURES
• PNP silicon, planar design
• High voltage (max. 300V)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking: A92
ABSOLUTE RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
CONDITIONS
open emitter
SYMBOL
VCBO
open base
VCEO
open collector
VEBO
IC
I CM
I BM
TAMB<25^oC ; note1
PTOT
TSTG
TJ
TAMB
MIN.
-
-
-
-
-
-
-
-65
-
-65
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.2-JUL.10.2009
MAX.
-300
-300
-5
-500
-600
-100
225
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
o_C
o_C
o_C
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