MMBTA42 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor

MMBTA42
NPN HIGH VOLTAGE TRANSISTOR
VOLTAGE 300 Volts ^POWER 225 mWatts
FEATURES
• NPN silicon, planar design
• Collector-emitter voltage V_CE = 300V
• Collector current I_C = 500mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking: A42
ABSOLUTE MAXIMUM RATINGS
PA RA ME TE R
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
S ym b o l
V _CEO
V _CBO
V _EBO
I_C
Value
300
300
6.0
500
Uni ts
V
V
V
mA
PA RA ME TE R
Max Power Dissipation (Note 1)
Thermal Resistance,Junction to Ambient
J unc ti o n Te m p e ra ture
S to ra g e Te m p e ra ture
S ym b o l
P _TOT
R _{θJ A}
T_J
T_STG
Value
225
556
-55 to 150
-55 to 150
Uni ts
mW
O_{C /W}
O_C
O_C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-MAR.24.2008
Top View
3
Collector
3
COLLECTOR
1
BASE
1
Base
2
Emitter
2
EMITTER
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