MMBTA05-AU Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – NPN AND PNP HIGH VOLTAGE TRANSISTOR

M M B TA 0 5 - A U , M M B TA 0 6 - A U , M M B TA 5 5 - A U , M M B TA 5 6 - A U
NPN AND PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE 60~80 Volts ^POWER 225 mWatts
SOT-23
FEATURES
• NPN and PNP silicon, planar design
• Collector current I_C = 500mA
• Acqire quality system certificate : TS16949
• $(&4TXDOLILHG
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking :
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
MMBTA05-AU=B05 MMBTA06-AU=B06 MMBTA55-AU=B55 MMBTA56-AU=B56
Unit：inch(mm)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS
PA RA ME TE R
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Conti nuous
Ci rcuit Figure
S YMB O-
L
MMB TA 05-A U
MMBTA 55-AU
M MB TA 0 6-A U
MMBTA 56-AU
U N IT S
V _CEO
60
80
V
V _CBO
60
80
V
V _EBO
4.0
V
I
500
mA
C
NPN
PNP
NPN
PNP
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board (Note 1)TA =25^OC
Derate above 25 ^OC
Thermal Resistance , Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 2)TA =25^OC
Derate above 25 ^OC
Thermal Resistance , Junction to Ambient
Junction and Storage Temperature
1.FR-4=70 x 60 x 1mm.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina
SYMBOL
PD
RθJA
PD
RθJA
TJ,TSTG
MAX
225
1.8
556
300
2.4
417
-55 to 150
PNP
UNIT
mW
mW/^OC
O_C/W
mW
mW/^OC
O_C
O_C
NPN
STAD-NOV.30.2005
PAGE . 1