MMBT918 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – VHF/UHF NPN SILICON TRANSISTOR

MMBT918
VHF/UHF NPN SILICON TRANSISTOR
VOLTAGE ^{15 Volts POWER 225 mWatts}
FEATURES
• NPN silicon
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking: R1B
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER
Total Device Dissipation (Note1)T_A=25^OC
Derate above 25^OC
Thermal Resistance , Junction to Ambient
Junction and Storage Temperature
Note 1: FR.4 = 70 x 60 x 1mm.
STAD-JUL.26.2006
Symbol
VCEO
VCBO
VEBO
IC
Value
15
30
3.0
50
Units
V
V
V
mA
Symbol
P_D
R_{θJ A}
T_J,T_{S TG}
Value
225
1.8
556
-55 to 150
Units
mW
mW/^O C
O _C/W
O_C
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