MMBT5551 Datasheet, PDF (1/6 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT5551
NPN HIGH VOLTAGE TRANSISTOR
VOLTAGE 160 Volts ^POWER 250 mWatts
FEATURES
• NPN Silicon, planar design
• Collector-emitter voltage V_CE = 160V
• Collector current I_C = 300mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking: M51
C
0.120(3.04)
0 . 11 0 ( 2 . 8 0 )
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0 .004 (0.10 )
0 .000 (0.00 )
0 .020 (0.50 )
0 .013 (0.35 )
0.008(0.20)
0.003(0.08)
0. 044(1 .10)
0. 035(0 .90)
B
E
ABSOLUTE MAXIMUM RATINGS (TA=25^oC unless otherwise noted)
PAR AMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current Continuous
S YMBOL
V_CEO
V_CBO
V _EBO
I_C
THERMAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
PAR AME T E R
Max Power Dissipation (Note 1)
Thermal Resistance ,Junction to Ambient (Note 1)
Op e r a ti ng J unc ti o n Te mp e r a tur e a nd S to r a g e Te m p e ra tur e Ra ng e
NOTES:
1.Mounted on FR-4 PCB, single sided copper, mini pad.
S YM B O L
P_D
R _{J A}
T_J,T_STG
VA L U E
160
180
6
300
U N ITS
V
V
V
mA
VAL U E
250
325
-55 to +150
UNITS
mW
O_{C / W}
O_C
October 24,2012-REV.00
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