MMBT4403W_09 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMBT4403W
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40V
SOT-323
POWER 200mW
Unit: inch (mm)
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage V_CE = -40V
Collector current I_C =-600mA
Complimentary (NPN) device: MMBT4401W
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-323
Terminals: Solderable per MIL-STD-750, Method 2026
Approx Weight: 0.005gram
Marking: M3W
Top View
3
Collector
1
BASE
3
COLLECTOR
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.056(1.40)
.047(1.20)
.004(.10)MAX.
.006(.15)
.002(.05)
.016(.40)
.008(.20)
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
SYMBOL
V_CE0
V_CB0
V_EB0
I_C
P_TOT
T_J, T_STG
VALUE
-40
-40
-5.0
-600
200
-55 to 150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
Thermal Resistance , Junction to Ambient (Note 1) RθJ A
625
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad.
UNIT
V
V
V
mA
mW
℃
UNIT
℃/W
REV.0.1-MAR.5.2009
PAGE . 1