MMBT4403W Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMBT4403W
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40V
POWER 200mW
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage V_CE = -40V
Collector current I_C =-600mA
Complimentary (NPN) device: MMBT4401W
MECHANICAL DATA
Case: SOT-323
Terminals: Solderable per MIL-STD-202, Method 208
Approx Weight: 0.02 grams
Marking: M3W
Top View
3
Collector
1
BASE
3
COLLECTOR
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
SYMBOL
V_CE0
V_CB0
V_EB0
I_C
P_TOT
T_J, T_STG
VALUE
-40
-40
-5.0
-600
200
-55 to 150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
Thermal Resistance , Junction to Ambient (Note 1) RθJ A
625
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad.
UNIT
V
V
V
mA
mW
℃
UNIT
℃/W