MMBT4401W Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon General Purpose Transistor

DATA SHEET
M_WMBT4401W
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 Volts
POWER
225mW
FEATURES
NPN epitaxial silicon, planar design
Collector-emitter voltage VCE = 40V
Collector current IC = 600mA
In compliance with EU RoHS 2002/95/EC directives
SOT-323
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
Unit: inch (mm)
MECHANICAL DATA
Case: SOT- 323
3
Terminals: Solderable per MIL-STD-750, Method 2026
Approx Weight: 0.0048 gram
Marking: M4A
.056(1.40)
.047(1.20)
.004(.10)MAX.
.006(.15)
.002(.05)
.016(.40)
.008(.20)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Max Power Dissipation (Note 1)
P_TOT
Storage Temperature
T_STG
Junction Temperature
T_J
Thermal Resistance , Junction to Ambient
R
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.1-MAR.4.2009
Value
40
60
6.0
600
Value
225
-55 to 150
-55 to 150
556
UNIT
V
V
V
mA
UNIT
mW
/W
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