MMBT3906_08 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 Volts ^{POWER 225 mWatts}
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking: S2A
Top View
3
Collector
1
BASE
3
COLLECTOR
1
Base
2
Emitter
2
EMITTER
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
-200
Units
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
PTOT
RθJA
TJ
TSTG
Value
225
556
-55 to 150
-55 to 150
Units
mW
O_C/W
O_C
O_C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
REV.0.0-JUL.9.2008
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