MMBT3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

DATA SHEET
MMBT3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 Volts ^{POWER 225 mWatts SOT- 23}
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.119(3.00)
.110(2.80)
MECHANICAL DATA
.083(2.10)
.066(1.70)
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.008 gram
Marking: S2A
Top View
3
Collector
1
BASE
3
COLLECTOR
.006(.15)MAX
.020(.50)
.013(.35)
Unit: inch (mm)
.006(.15)
.002(.05)
1
Base
2
Emitter
ABSOLUTE RATINGS
PARAM ETER
C ollector-Em itterVoltage
C ollector-Base Voltage
Em itter-Base Voltage
C ollectorC urrent-C ontinuous
2
EMITTER
Sym bol
VCEO
VCBO
V EBO
IC
Value
-40
-40
-5.0
-200
U nits
V
V
V
mA
THERMAL CHARACTERISTICS
PARAM ETER
M ax PowerD issipation (Note 1)
Therm alResistance ,Junction to Am bient
Junction Tem perature
Storage Tem perature
Sym bol
P TO T
R θJA
TJ
TIS TG
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUN.21.2004
Value
225
556
-55 to 150
-55 to 150
U nits
mW
O _{C /W}
O_C
O_C
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