MBR6040ST Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

MBR6040ST SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 40 to 100 Volts CURRENT 60 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247S / TO-3PS molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.1932 ounces, 5.4803 grams.
0.615(15.60)MAX.
0.520(13.20)
0.504(12.80)
0.402(10.20)
0.385(9.80)
0.118(3.0)
MIN.
0.599(15.20)
0.582(14.80)
0.071(1.80)
0.055(1.40)
0.095(2.40)
0.078(2.00)
0.050(1.25)
0.037(0.95)
0.223(5.65)
0.206(5.25)
0.223(5.65)
0.206(5.25)
0.185(4.70)
0.169(4.30)
0.103(2.60)
0.090(2.30)
0.025(0.62)
0.014(0.38)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YM B OL MB R60 40S T MB R60 45S T MB R608 0S T MB R609 0S T MB R601 00 S T UNITS
Maximum Recurrent Peak Reverse Voltage
V _RRM
40
45
80
90
100
V
Maximum RMS Voltage
V _RMS
28
31.5
56
63
70
V
Maximum DC Blocking Voltage
V _DC
40
45
80
90
100
V
Maximum Average Forward Current
Peak Forward Surge C urrent : 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
I_F(AV)
I_{F S M}
Maximum Forward Voltage at 30A per leg
V_F
0.7
Maximum DC Reverse Current at
Rated D C Blocking Voltage
T_J=25 ^OC
T_J= 1 0 0 ^OC
I
R
Typ i c a l The r m a l Re s i s ta nc e
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Range
R_JC
T_J,T_STG -55 to+15 0
60
400
0.79
0.1
20
1.5
-65 to +175
A
A
0.8
0.05
20
V
mA
O_{C / W}
O_C
Note :
Both Bonding and Chip structure are available.
September 3,2010-REV.02
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