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MBR6040PT Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS | |||
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MBR6040PT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 40 to 200 Volts CURRENT 60 Amperes
FEATURES
⢠Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
⢠Metal silicon junction, majority carrier conduction
⢠Low power loss, high efficiency.
⢠High current capability
⢠Guardring for overvoltage protection
⢠For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
⢠In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
⢠Case: TO-247AD / TO-3P molded plastic
⢠Terminals: solder plated, solderable per MIL-STD-750, Method 2026
⢠Polarity: As marked.
⢠Mounting Position: Any
⢠Weight: 0.2245 ounces, 6.3673 grams.
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0 . 11 0 ( 2 . 8 0 )
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL MBR6040PT MBR6045PT MBR6050PT MBR6060PT MBR6080PT MBR6090PT MBR60100PT MBR60150PT MBR60200PT UNITS
Maximum Recurrent Peak Reverse Voltage
V
40
45
50
60
80
90
100
150
200
V
RRM
Maximum RMS Voltage
V RMS
28
31.5
35
42
56
63
70
105
140
V
Maximum DC Blocking Voltage
V
40
45
50
60
80
90
100
150
140
V
DC
Maximum Average Forward Current
IF(AV)
Peak Forward Surge Current : 8.3ms single
half sine-wave superimposed on rated load
IFSM
(JEDEC method)
Maximum Forward Voltage at 30A per leg
VF
0.7
Maximum DC Reverse Current at
Rated DC Blocking Voltage
TJ=25 OC
TJ= 1 0 0 OC
IR
Typical Thermal Resistance
Rï±JC
Operati ng Juncti on and S torage Temperature
Range
TJ,TSTG -55 to + 150
60
400
0.79
0.1
20
0.8
1.5
-65 to +175
0.9
0.05
20
A
A
V
mA
OC / W
OC
Note :
Both Bonding and Chip structure are available.
September 3,2010-REV.02
PAGE . 1
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