MBR6020PT Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – 60 AMPERES SCHOTTKY BARRIER RECTIFIERS

MBR6020PT~MBR60100PT
60 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT 60 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
MECHANICAL DATA
Case: TO-3P molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.2 ounces, 5.6 grams.
TO-3P
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit: inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.095(2.4)
.225(5.7)
.204(5.2)
AC
Positive CT
AC
.030(0.75)
.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL MBR6020PT MBR6030PT MBR6040PT MBR6045PT MBR6050PT MBR6060PT MBR6080PT MBR60100PT UNITS
VRRM
20
30
40
45
50
60
80
100
V
Maximum RMS Voltage
VRMS
14
21
28
31.5
35
42
56
70
V
Maximum DC Blocking Voltage
VDC
20
30
40
45
50
60
80
100
V
Maximum Average Forward Current (See fig.1)
IAV
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IFSM
Maximum Forward Voltage at 30A, per leg
VF
Maxi mum D C Reverse C urrent Tc=25 ^OC
at Rated DC Blocking Voltage Tc=125^OC
IR
Typical Thermal Resistance
RθJC
40
400
0.7
0.8
0.1
20
1.5
A
A
V
mA
O_{C / W}
Operating Junction Temperature Range
TJ
-50 TO + 150
O_C
Storage Temperature Range
TSTG
-50 TO + 175
O_C
Notes :
Both Bonding and Chip structure are available.
REV.0-MAR.30.2005
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