MBR540_16 Datasheet, PDF (1/5 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Dioeds

MBR540 SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 40 to 200 Volt CURRENT
5 Ampere
FEATURES
• Epitaxial Construction
• Guard Ring Die Construction for Transient Protection
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• Surge Overload Rating to 150A Peak
• For Use in Low Voltage, High Frequency Inverters, Free Wheeling,
and Polarity Protection Applications
• Lead free in compliance with EU RoHS 2011/65/EU directive
MECHANICAL DATA
• Case: DO-201AD Molded plastic
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Color band denotes cathode
• Weight: 0.0402 ounces, 1.142 grams
0.052(1.3)
0.048(1.2)
0.210(5.3)
0.188(4.8)
1
Cathode
2
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PARAMETER
SY MBO L MBR540 MBR545 MBR550 MBR560 MBR580 MBR590 MBR5100 MBR5150 MBR5200 UNI TS
Maximum Recurrent Peak Reverse Voltage
V_RRM
40
45 50 60 80 90 100 150 200
V
Maximum RMS Voltage
V
RMS
28 31.5 35 42 56 63
70
105 140
V
Maximum DC Blocking Voltage
V_DC
40
45 50 60
Average Rectified Output Current (See Figure 1)
I _F(AV)
Non-Repetitive Peak Forward Surge Current : 8.3ms single
half sine-wave superimposed on rated load
I _FSM
Power Dissipation
P_D
Forward Voltage at 5A (Notes 3)
V
0.7
F
0.74
T_J=25^OC
Maximum DC Reverse Current at Rated DC
Blocking Voltage (Notes 4)
T_J=100^OC
I_R
10
T =125OC
J
-
Typical Thermal Resistance (Notes 2)
R _θJA
(Notes 1)
R_θJL
(Notes 1)
R _θJC
Typical Junction Capacit ance ( V_R=4V,f= 1MHz)
C_J
250
O per at ing Junct ion and St or age Temper at ur e Range
T ,T
-55 to +150
J STG
NOTES :
1. Measured at ambient temperature at a distance of 9.5mm from the case
2. Minimum Pad Area
3. Pulse test : 300μs pulse width, 1% duty cycle
4.Short duration pulse test used to minimize self-heating effect.
80 90 100 150 200
V
5
A
150
2.5
0.8
A
W
0.9
V
0.05
-
5
50
15
12
150
-65 to +150
mA
mA
1
mA
O_{C / W}
pF
O_C
September 30,2016-REV.04
PAGE . 1