MBR4040ST Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

MBR4040ST SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 40 to 100 Volts CURRENT 40 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247S/TO-3PS molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
0.615(15.60)MAX.
0.520(13.20)
0.504(12.80)
0.402(10.20)
0.385(9.80)
0 . 11 8 ( 3 . 0 )
MIN.
0.599(15.20)
0.582(14.80)
0.071(1.80)
0.055(1.40)
0.095(2.40)
0.078(2.00)
0.050(1.25)
0.037(0.95)
0.223(5.65)
0.206(5.25)
0.223(5.65)
0.206(5.25)
0.185(4.70)
0.169(4.30)
0.103(2.60)
0.090(2.30)
0.025(0.62)
0.014(0.38)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
S YM B O L MBR4040ST MBR4045ST MBR4050ST MBR4060ST MBR4080ST MBR4090ST MBR40100ST UNITS
V _RRM
40
45
50
60
80
90
100
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
28
31.5
35
42
56
63
70
V
RMS
V _DC
40
45
50
60
80
90
100
V
Maximum Average Forward Current
I_{F (AV )}
Peak Forward Surge Current : 8.3ms single
half sine-wave superimposed on rated load
I_FSM
(JEDEC method)
Maximum Forward Voltage at 20A per leg
V_F
0.7
Maximum DC Reverse Current at
Rated DC Blocking Voltage
T_J=25^OC
T_J= 1 2 5 ^OC
I_R
Typ i c a l The rma l Re s i sta nc e
Op e ra ti ng Juncti o n a nd S to ra g e Te mp e ra ture
Range
R_JC
T_J,T_STG -55 to + 150
40
350
0.79
0.1
20
1.2
-65 to +175
A
A
0.8
V
0.05
20
mA
O_{C / W}
O_C
Note :
Both Bonding and Chip structure are available.
September 2,2010-REV.02
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