MBR3040FCT Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

MBR3040FCT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 40 to 200 Volts CURRENT 30 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.406(10.3)
0.381(9.7)
0.134(3.4)
0 . 11 8 ( 3 . 0 )
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.100(2.55)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0 . 11 4 ( 2 . 9 )
0 . 11 4 ( 2 . 9 )
0.098(2.5)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL MBR3040FCT MBR3045FCT MBR3050FCT MBR3060FCT MBR3080FCT MBR3090FCT MBR30100FCT MBR30150FCT MBR30200FCT UNITS
Maximum Recurrent Peak Reverse Voltage V_RRM
40
45
50
60
80
90
100
150
200
V
Maximum RMS Voltage
V
28
31.5
35
42
56
63
70
105
140
V
RMS
Maximum DC Blocking Voltage
V_DC
40
45
50
60
80
90
100
150
200
V
Maximum Average Forward Current
I
F(AV)
Peak Forward Surge Current :8.3ms single
half sine-wave superi mposed on rated load I_FSM
(JEDEC method)
Maximum Forward Voltage at 15A per leg
V_F
0.7
Maximum DC Reverse Current T_J=25 ^OC
at Rated DC Blocking Voltage T_J=125^OC
I_R
Typi cal Thermal Resi stance
Operating Junction and
StorageTemperature Range
R_JC
T ,T
-55 to + 150
J STG
30
275
0.75
0.8
0.1
20
1.4
-65 to + 175
0.9
0.05
20
A
A
V
mA
O_{C / W}
O_C
Note :
Both Bonding and Chip structure are available.
August 30,2010-REV.02
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