MBR3020ST Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

MBR3020ST SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT 30 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247S/TO3PS molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.1932 ounces, 5.4803 grams.
0.615(15.60)MAX.
0.520(13.20)
0.504(12.80)
0.402(10.20)
0.385(9.80)
0.118(3.0)
MIN.
0.599(15.20)
0.582(14.80)
0.071(1.80)
0.055(1.40)
0.095(2.40)
0.078(2.00)
0.050(1.25)
0.037(0.95)
0.223(5.65)
0.206(5.25)
0.223(5.65)
0.206(5.25)
0.185(4.70)
0.169(4.30)
0.103(2.60)
0.090(2.30)
0.025(0.62)
0.014(0.38)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL MBR3020ST MBR3030ST MBR3040ST MBR3045ST MBR3050ST MBR3060ST MBR3080ST MBR3090ST MBR30100ST UNITS
Maximum Recurrent Peak Reverse Voltage
V _RRM
20
30
40
45
50
60
80
90
100
V
Maximum RMS Voltage
V _RMS
14
21
28
31.5
35
42
56
63
70
V
Maximum DC Blocking Voltage
V_DC
20
30
40
45
50
60
80
90
100
V
Maximum Average Forward Current
I
F(AV)
Peak Forward Surge Current :8.3ms single
half sine-wave superimposed on rated load
I_FSM
(JEDEC method)
Maximum Forward Voltage at 15A per leg
V_F
Maximum DC Reverse Current at T_J=25 ^OC
Rated DC Blocking Voltage
T_J= 1 2 5 ^OC
I_R
Typi ca l The rma l Res i stance
R_JC
Ope rati ng Juncti o n a nd S tora ge Te mp era ture
Range
TJ,TSTG
0.70
-55 to + 150
30
A
275
A
0.75
0.1
20
1.4
-65 to + 175
0.8
V
0.05
20
mA
O_{C /}
W
O_C
Note :
Both Bonding and Chip structure are available.
August 31,2010-REV.02
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