MBR2020CT Datasheet, PDF (1/2 Pages) Micro Commercial Components – 20 Amp Schottky Barrier Rectifier 20 to 100 Volts

DATA SHEET
MBR2020CT~MBR20100CT
20 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT 20 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet RoHS
environment substance directive request
MECHANICAL DATA
Case: TO-220AB molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.025(0.65)MAX
.1(2.54)
AC
Positive CT
AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL MBR2020CT MBR2030CT MBR2040CT MBR2045CT MBR2050CT MBR2060CT MBR2080CT MBR20100CT UNITS
VRRM
20
30
40
45
50
60
80
100
V
Maximum RMS Voltage
VRMS
14
21
28
31.5
35
42
56
70
V
Maximum DC Blocking Voltage
VDC
20
30
40
45
50
60
80
100
V
Maximum Average Forward Current (See fig.1)
IAV
20
A
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IFSM
150
A
Maximum Forward Voltage at 10A, per leg
VF
0.65
0.8
V
Maximum DC Reverse Current Tc=25 ^OC
at Rated DC Blocking Voltage Tc=125^OC
IR
Typical Thermal Resistance
RθJC
Operating Junction Temperature Range
TJ
0.1
20
mA
2
O_{C /}
W
-50 TO + 150
O_C
Storage Temperature Range
TSTG
-50 TO + 150
O_C
Notes :
Both Bonding and Chip structure are available.
STAD-JUL.25.2005
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