KBU10A_07 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SILICON BRIDGE RECTIFIERS

KBU10A~KBU10M
SILICON BRIDGE RECTIFIERS
VOLTAGE 50 to 1000 Volts CURRENT 10.0 Amperes ^KBU
FEATURES
• Plastic material used carries Underwriters Laboratory
Flammability Calssification 94V-0
• Reliable low cost construction utilizing molded plastic technique.
• Surge overload rating : 300 amperes peak
• Ideal for printed circuit board.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Reliable low cost construnction utilizing molded plastic techniquc
• Terminals: Lead solderable per MIL-STD-750,Method 2026
• Mounting Position: Any
• Weight: 6.9 grams
Unit: inch (mm)
.933(23.7)
.894(22.7)
.220(5.6)
.181(4.6)
.052(1.3)
.047(1.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL KBU10A KBU10B KBU10D KBU10G KBU10J KBU10K KBU10M UNITS
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS Birdge Input Voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward T_A=100^OC
Rectified Output Current at T_A=45^OC
IAV
Peak Forward Surge Current single-wave
superimposed on rated load(JEDEC Method)
IFSM
Maximum Instantaneous Forward Voltage Drop per Element
at 8.0A
VF
Maximum Reverse Leakage at Rated T =25OC
A
DC Blocking Voltage per element T_A=100^OC
IR
Maxi mum Temperature Resi stance JC (Note1)
R _{θJ - C}
Operati ng and S torage Temperature Range
TSTG
100
200
400
600
800
1000
V
10.0
8.0
A
300
A
1.1
V
10.0
µA
300
mA
2.5
O_C/W
-55 to +150
O_C
STAD-MAY.25.2007
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