ER1600CT_09 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ISOLATION SUPERFAST RECOVERY RECTIFIER

ER1600CT~ER1606CT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE 50 to 600 Volts CURRENT 16.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
.058(1.47)
.042(1.07)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YM B OL E R1600C T E R1601C T E R1601A C T E R1602C T E R1603C T E R1604C T E R1606C T UNITS
Maximum Recurrent Peak Reverse Voltage
V
50
100
150
200
300
400
600
V
RRM
Maximum RMS Voltage
V_RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V_DC
50
100
150
200
300
400
600
V
Ma xi mum A ve ra g e F o rwa rd C urre nt a t Tc =9 0 ^OC
Peak Forward Surge Current, 8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
I_{F ( A V )}
I_{F S M}
Maximum Forward Voltage at 8A
V_F
Maximum DC Reverse Current at T_J=25^OC
Rated DC Blocking VoltageT_J=100^OC
I_R
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 2 )
t_rr
0.95
35
16.0
125
1.0
500
1.30
50
A
A
1.70
V
µA
ns
Typ i c a l J unc ti o n c a p a c i ta nc e (No te 1 )
C_J
Typ i c a l The rma l Re s i s ta nc e
R_{θJ C}
Op e ra ti ng a nd S to ra g e Te mp e ra ture Ra ng e
NOTES:
T_J,T_{S TG}
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
62
3.0
-50 to +150
pF
O_{C /}
W
O_C
STAD-MAR.06.2009
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