ER1600CT Datasheet, PDF (1/2 Pages) Won-Top Electronics – 16A SUPER-FAST GLASS PASSIVATED RECTIFIER

DATA SHEET
ER1600CT~ER1604CT
SUPERFAST RECOVERY RECTIFIER
VOLTAGE 50 to 400 Volts CURRENT 16.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICAL DATA
Case: TO-220AB Molded plastic
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
AC
Positive CT
AC
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
S YMB OL
ER1600
CT
ER1601 ER1601A
CT
CT
ER1602 ER1603 ER1604
CT
CT
CT
UNITS
Maximum Recurrent Peak Reverse Voltage
V RRM
50
100
150
200
300
400
V
Maximum RMS Voltage
V RMS
35
70
105
140
210
280
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
V
Maximum Average Forward Current .375"(9.5mm)
le a d le ng th a t Tc = 9 0 ^OC
IAV
16.0
A
Peak Forward Surge Current, 8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IF S M
125
A
Maximum Forward Voltage at 8A
VF
0.95
1.30
V
Maximum DC Reverse Current at TA=25^OC
Rated DC Blocking VoltageTA=100^OC
IR
10
500
uA
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 2 )
TRR
35
50
ns
Typ i c a l J unc ti o n c a p a c i ta nc e (No te 1 )
CJ
62
pF
Maximum Thermal Resistance
R θJ C
3.0
O_{C / W}
Op e r a ti ng a nd S to r a g e Te m p e r a tur e Ra ng E
TJ,TSTG
-50 TO +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-SEP.12.2004
PAGE . 1