ER1000F_09 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ISOLATION SUPERFAST RECOVERY RECTIFIERS

ER1000F~ER1006F
ISOLATION SUPERFAST RECOVERY RECTIFIERS
VOLTAGE 50 to 600 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AC Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.05 ounces, 1.56grams.
.027(.67)
.022(.57)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL E R1000F E R1001F E R1001A F E R1002F E R1003F E R1004F E R1006F UNITS
Maximum Recurrent Peak Reverse Voltage
V _RRM
50
100
150
200
300
400
600
V
Maximum RMS Voltage
V _RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V_DC
50
100
150
200
300
400
600
V
Ma xi mum A ve ra g e F o rwa rd C urre nt a t Tc =1 0 0 ^OC
I_{F ( AV )}
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
I_{F S M}
Maximum Forward Voltage at 10A, per element
V_F
Maximum DC Reverse Current at T_J=25^OC
Rated DC Blocking VoltageT_J=100^OC
I_R
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 2 )
t_rr
0.95
35
10.0
150
1.0
500
1.30
50
A
A
1.7
V
µA
ns
Typ i c a l J unc ti o n c a p a c i ta nc e (No te 1 )
Typ i c a l The rma l Re s i s ta nc e
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
C_J
R _{θJ C}
T_J,T_STG
62
3.0
-55 to +150
pF
O_{C /}
W
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-AUG.12.2009
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