ER1000F_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ISOLATION SUPERFAST RECOVERY RECTIFIERS

DATA SHEET
ER1000F~ER1004F
ISOLATION SUPERFAST RECOVERY RECTIFIERS
VOLTAGE ^{50 to 400 Volts} CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICAL DATA
Case: ITO-220AC Molded plastic
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
ITO-220AC
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
S YMB OL E R1000F E R1001F E R1001A F E R1002F E R1003F E R1004F UNITS
V RRM
50
100
150
200
300
400
V
Maximum RMS Voltage
V RMS
35
70
105
140
210
280
V
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward Current .375"(9.5mm)
le a d le ng th a t Tc =1 0 0 ^O C
IAV
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IF S M
Maximum Forward Voltage at 10A, per element
VF
Ma xi mum D C Re ve rs e C urre nt a t TA =2 5 ^O C
Ra te d D C B lo c k i ng Vo lta g e TA =1 0 0 ^O C
IR
Ma xi mum Re ve rse Re co ve ry Ti me (No te 2 )
TRR
100
150
200
300
400
V
10.0
A
150
A
0.95
10
500
35
1.30
V
uA
50
ns
Typ i ca l Juncti o n ca p a ci ta nce (No te 1 )
CJ
62
pF
Maximum Thermal Resistance
R θJ C
3.0
O_{C / W}
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
TJ,TSTG
-50 TO +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-APR.19.2004
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