ER1000FCT_10 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SUPERFAST RECOVERY RECTIFIERS

ER1000FCT~ER1006FCT
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE 50 to 600 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859grams.
.027(.67)
.022(.57)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL ER1000FCT ER1001FCT ER1001AFCT E R1002FC T E R1003FC T ER1004FC T ER1006F CT UNITS
Maximum Recurrent Peak Reverse Voltage
V
50
100
150
200
300
400
600
V
RRM
Maximum RMS Voltage
V _RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V
50
100
150
200
300
400
600
V
DC
M a xi m um A ve ra g e F o rwa rd C urre nt a t Tc =1 0 0^OC
I_{F ( AV )}
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
I_FSM
Maximum Forward Voltage at 5A, per element
V_F
Maxi mum DC Reverse Current at T_J=25^OC
Rated DC Blocking VoltageT_J=100^OC
I_R
Maxi mum Reverse Recovery Time (Note 2)
t_rr
0.95
35
10.0
150
1.0
500
1.30
50
A
A
1.7
V
μA
ns
Typ i ca l Juncti on c ap a ci tance (No te 1 )
C_J
Typ i ca l Thermal Re si sta nce
R_θJC
62
pF
3.0
O_{C /}
W
Op e ra ti ng J uncti o n a nd S to ra g e Te m p e ra ture Ra ng e
T ,T
-55 to +150
O_C
J STG
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
May 5,2010-REV.02
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