ER1000CT_09 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SUPERFAST RECOVERY RECTIFIERS

ER1000CT~ER1006CT
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE 50 to 600 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859grams.
.058(1.47)
.042(1.07)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL E R1000C T E R1001C T E R1001A C T E R1002C T E R1003C T E R1004C T E R1006C T UNITS
Maximum Recurrent Peak Reverse Voltage
V _RRM
50
100
150
200
300
400
600
V
Maximum RMS Voltage
V _RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V_DC
50
100
150
200
300
400
600
V
Ma xi mum A ve ra g e F o rwa rd C urre nt a t Tc =1 0 0 ^OC
I_F(AV)
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
I_FSM
Maximum Forward Voltage at 5A, per element
V_F
Maximum DC Reverse Current at T_J=25^OC
Rated DC Blocking VoltageT_J=100^OC
I_R
Ma xi mum Re ve rse Re co ve ry Ti me (No te 2 )
t_rr
0.95
35
10.0
150
1.0
500
1.30
50
A
A
1.7
V
µA
ns
Typ i ca l Juncti o n ca p a ci ta nce (No te 1 )
C_J
Typ i ca l The rma l Re si sta nce
R _{θJ C}
62
pF
3.0
O_{C /}
W
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
T_J,T_STG
-55 to +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-MAR.06.2009
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