ER1000CT_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SUPERFAST RECOVERY RECTIFIERS

DATA SHEET
ER1000CT~ER1004CT
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE ^{50 to 400 Volts} CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
MECHANICAL DATA
Case: TO-220AB Molded plastic
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
.038(0.96)
.019(0.50)
.1(2.54)
.025(0.65)MAX
.1(2.54)
AC
Positive CT
AC
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
S YMB OL E R1 0 0 0 C T E R1 0 0 1 C T E R1 0 0 1 A C T E R1 0 0 2 C T E R1 0 0 3 C T E R1 0 0 4 C T UNITS
V RRM
50
100
150
200
300
400
V
Maximum RMS Voltage
V RMS
35
70
105
140
210
280
V
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward Current .375"(9.5mm)
le a d le ng th a t Tc =1 0 0 ^OC
IAV
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IF S M
Maximum Forward Voltage at 5A, per element
VF
Ma xi mum D C Re ve rs e C urre nt a t TA =2 5 ^OC
Ra te d D C B lo c k i ng Vo lta g e TA =1 0 0 ^OC
IR
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 2 )
TRR
100
150
200
10.0
150
0.95
10
500
35
300
400
V
A
A
1.30
V
uA
50
ns
Typ i c a l J unc ti o n c a p a c i ta nc e (No te 1 )
CJ
62
pF
Maximum Thermal Resistance
R θJ C
3.0
O_{C / W}
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
TJ,TSTG
-50 TO +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-NOV.24.2004
PAGE . 1