ED502YT_05 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER

DATA SHEET
ED502YT~ED506YT
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
VOLTAGE 200 to 600 Volts VOLTAGE _{6.0 Amperes}
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-
S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high vltage.
• Epitaxial chip construction.
• Pb free product are available : 99% Sn above can meet Rohs enivronment
substance directive request
MECHANICAL DATA
Case: TO-252 molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.0015 ounces, 0.4grams.
TO-251AB
.264(6.7)
.248(6.3)
.216(5.5)
.200(5.1)
.032(0.8)
.012(0.3)
.09 .09
(2.3) (2.3)
Unit : inch (mm)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
.071(1.8)
.051(1.3)
.02(0.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
S YMB OL E D 502YT E D 503YT E D 504YT E D 506YT UNITS
V RRM
200
300
400
600
V
Maximum RMS Voltage
V RMS
140
210
280
420
V
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Current .375"(9.5mm)
lead length at T_A =75^OC
IAV
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IF S M
Maximum Forward Voltage at 3.0A DC
VF
Maximum DC Reverse Current at Rated DC Blocking Voltage
TA =1 2 5 ^OC
IR
Ma xi mum Re ve rse Re co ve ry Ti me
T_rr
Typ i ca l The rma l Re si sta nc e
R _{θJ A}
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
TJ,TSTG
200
0.95
300
400
5.0
75
1.25
5.0
50
35
9.0
-50 TO +125
600
V
A
A
1.70
V
µA
nS
O_{C / W}
O_C
NOTES:
1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to CASE.
REV.0-MAR.19.2005
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