BZT52-B5V1FN2-AU Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – SURFACE MOUNT SILICON ZENER DIODES

BZT52-B5V1FN2-AU SERIES
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE 5.1~5.6 Volts
POWER 250 mWatts
FEATURES
• Planar Die construction
• 250mW Power Dissipation
• Zener Voltages from 5.1-5.6V
• Ideally Suited for Automated Assembly Processes
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: DFN-2L, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0011 grams , 0.00004 ounces
• Mounting Position: Any
• Polarity:Color band denotes cathode end
0.042(1.05)
0.037(0.95)
0.013(0.32)
0.008(0.22)
PIN NO.1
IDENTIFICATION
1
Cathode
2
Anode
0.002(0.05)MAX.
MAXIMUM RATINGS (TA=25^oC unless otherwise noted)
Parameter
Power Dissipation
Thermal resistance Junction to Ambient ( Note 1)
Operating Junction Temperature and StorageTemperature Range
Symbol
PD
RΘJA
TJ
Value
250
500
-55 to +150
Units
mW
O_C/W
O_C
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Part Number
Nominal Zener Voltage
Nom. V
V Z @ IZT
Min. V
Max. V
250 mWatts Zener Diodes
BZT52-B5V1FN2-AU
5.1
5.00
5.20
BZT52-B5V6FN2-AU
5.6
5.49
5.71
NOTES:
1.Mounted on mimimum pad layout .
Max. Zener Impedance
ZZT @ IZT
Ω
mA
ZZK @ IZK
Ω
mA
60
5.0
480
1.00
40
5.0
400
1.00
June 28,2011-REV.00
Max Reverse
Leakage Current
IR @ VR
μA
V
Marking
Code
2
2
W9
1
2
WA
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