BSS8402DW_14 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

BSS8402DW
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS
This space-efficient device contains an electrically-isolated complimentary pair
of enhancement-mode MOSFETs (one N-channel and one P-channel). It
comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
portable applications where board space is at a premium.
FEATURES
SOT- 363
4
5
Complimentary Pairs
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
Lead free in comply with EU RoHS 2002/95/EC directives.
Green molding compound as per IEC61249 Std. . (Halogen Free)
6
3
2
1
6 54
APPLICATIONS
Switching Power Supplies
Q₁
Q₂
Hand-Held Computers, PDAs
MARKING CODE: S82
1 23
MAXIMUM RATINGS - TOTAL DEVICE ^T_J ^{= 25°C Unless otherwise noted}
Rating
Symbol
Value
Units
Total Power Dissipation (Note 1)
P_D
200
mW
Operating Junction and Storage Temperature Range
T_J, Tstg
-55 to +150
°C
MAXIMUM RATINGS N - CHANNEL - Q₁ , 2N7002 ^T_J ^{= 25°C Unless otherwise noted}
Rating
Symbol
Value
Units
Drain-Source Voltage
V_DSS
60
V
Drain-Gate Voltage R_GS < 1.0Mohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
V _DGR
60
V
V_GSS
±20
V
I_D
115
mA
MAXIMUM RATINGS P - CHANNEL - Q₂ , BSS84 ^T_J ^{= 25°C Unless otherwise noted}
Rating
Symbol
Value
Units
Drain-Source Voltage
V_DSS
-50
V
Drain-Gate Voltage R_GS < 20Kohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
V _DGR
-50
V
V_GSS
±20
V
I_D
130
mA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
R _thja
Value
625
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
Units
°C/W
9/15/2005
Page 1
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