BC847CSTB6 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – DUAL NPN GENERAL PURPOSE TRANSISTOR

BC847CSTB6
DUAL NPN GENERAL PURPOSE TRANSISTOR
VOLTAGE ^{45 Volts} POWER ^{210 mWatts}
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 45V
• Collector current IC = 100mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (HalogenFree)
MECHANICAL DATA
• Case: SOT-563, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.003 grams
• Marking: T7
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient (Note 1)
Operating Junction Temperature and Storage Temperature Range
N ot e
1: Mounted on 1cm² minimum pad PCB.
April 23,2012-REV.00
SYMBOL
VCEO
VCBO
VEBO
IC
VALUE
45
50
6.0
100
UNITS
V
V
V
mA
SYMBOL
P_TOT
R_JA
T_J,T_STG
VALUE
210
590
-55 to 150
UNITS
mW
O_C/W
O_C
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