BC847BS Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN general purpose double transistor

BC847BS
NPN GENERAL PURPOSE DUAL TRANSIS-
VOLTAGE 45 Volts
POWER 150 mWatts
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking : 47S
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER
Total Device Dissipation
Per Device FR-5 Board (Note 1)T_A=25^OC
Derate above 25^OC
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Note 1: FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-FEB.28.2007
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
6.0
100
Units
V
V
V
mA
Symbol
P_D
R_θJA
T_J
T_STG
Value
300
150
3.0
328
-55 to 150
-55 to 150
Units
mW
mW/^OC
O _C/W
O_C
O_C
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