BC807 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistor

BC807 SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE
45 Volts
POWER 225 mWatts
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current I_C = 500mA
• Pb free product are available : 99% Sn above can meet RoHS
environment substance directive request
SOT- 23
.119(3.00)
.110(2.80)
Unit: inch (mm)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Device Marking : BC807-16 : 7A
BC807-25 : 7B
BC807-40 : 7C
Top View
3
Collector
1
BASE
3
COLLECTOR
.083(2.10)
.066(1.70)
.006(.15)MAX
.020(.50)
.013(.35)
.006(.15)
.002(.05)
1
Base
2
Emitter
MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature
Range
2
EMITTER
SYMBOL
VCEO
VCBO
VEBO
IC
PTOT
TJ , TSTG
Value
-45
-50
-5.0
-500
225
-55 to 150
UNIT
v
v
v
mA
mW
o_C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance , Junction to Ambient
RθJA
Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in
STAD-SEP.24.2005
Value
556
UNIT
o_C/W
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