BAS19 Datasheet, PDF (1/3 Pages) NXP Semiconductors – General purpose diodes

BAS19 SERIES
SURFACE MOUNT SWITCHING DIODES
VOLTAGE 120-250 Volts
POWER 250mWatts
SOT- 23
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
.119(3.00)
.110(2.80)
.083(2.10)
.066(1.70)
Unit: inch (mm)
.006(.15)
.002(.05)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202G, Method 208
Approx. Weight: 0.008 gram
.006(.15)MAX
.020(.50)
.013(.35)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
M arking C ode
R everse V oltage
PA R A M E TE R
S YM B O L B A S 19
A8
VR
100
B A S 20
A 80
150
B A S 21
A 82
200
U N ITS
V
P eak R everse V oltage
R ectified C urrent (A verage), H alf W ave R ectification w ith
R esistive Load and f >=50 H z
P eak F orw ard S urge C urrent,1.0us
P ow er D issipation D erate A bove 25^O C
V RM
IO
IF S M
P TO T
120
200
200
2 .5
250
250
V
mA
A
mW
M axim um F orw ard V oltage at 0.1A
VF
M axim um D C R everse C urrent at R ated D C B locking V oltage
TJ= 25^O C
IR
Typical Junction C apacitance( N otes1)
CJ
M axim um R everse R ecovery (N otes2)
TR R
M axim um Therm al R esistance
R θJA
O perating Junction and S torage Tem perature R ange
TJ, TS TG
1 .0
0 .1
5 .0
50
500
-55 to +150
V
uA
pF
ns
O_{C /W}
O_C
NOTE:
1. CJ at VR=0, f=1MHZ
2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
SINGLE
3
1
2
REV.0-MAR.7.2005
PAGE . 1