BAS16_09 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 225mW SMD Switching Diode

BAS16~BAS21
SURFACE MOUNT SWITCHING DIODES
VOLTAGE 100-250 Volts ^{POWER 250mWatts}
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
PARAMETER
SYMBOL BAS16
BAS19
BAS20
Marking Code
A6
A8
A80
BAS21
A82
UNITS
Reverse Voltage
VR
75
100
150
200
V
Peak Reverse Voltage
VRM
100
Rectified Current (Average), Half Wave Rectification
with Resistive Load and f >=50 Hz
IO
250
Peak Forward Surge Current, tp=1.0µs single half
sine-wave superimposed on rated load
IFSM
2
(JEDEC method)
Power Dissipation Derate Above 25^OC
PTOT
350
120
200
250
V
200
200
200
mA
2.5
2.5
2.5
A
350
350
350
mW
Maximum Forward Voltage
VF 0.855@10mA
1.0@100mA
V
Maximum DC Reverse Current at Rated DC Blocking
Voltage TJ= 25^OC
IR
1
1
1
1
uA
Typical Junction Capacitance( Notes1)
CJ
2
1.5
1.5
1.5
pF
Maximum Reverse Recovery (Notes2)
TRR
6
50
50
50
ns
Typical Thermal Resistance
RΘJA
357
O_{C / W}
Storage Temperature Range
TJ
NOTE:
1. CJ at VR=0, f=1MHZ
2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
-55 TO +125
O_C
SINGLE
REV.0.1-FEB.4.2009
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