BAS116_07 Datasheet, PDF (1/3 Pages) Infineon Technologies AG – Silicon Low Leakage Diode

BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion.
• Very low leakage current. 2pA typical at VR=75V.
• Low capacitance. 2pF max at VR=0V, f=1MHz
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx weight: 0.008 gram
• Marking: BAS116: PA,BAW156:P4,BAV170:P3,BAV199:PB
ABSOLUTE RATINGS (each diode)
Reverse Voltage
PA RA ME TE R
Peak Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Surge Current at t=1.0us
THERMAL CHARACTERISTICS
PA RA ME TE R
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
J u n c t i o n Te m p e r a t u r e
S t o r a g e Te m p e r a t u r e
S ym b o l
VR
V RM
IF
I FSM
S ym b o l
P TOT
RθJA
TJ
TSTG
Value
75
100
0.2
4.0
Value
250
500
-55 to 150
-55 to 150
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
SINGLE
COMMON ANODE
COMMON CATHODE
Uni ts
V
V
A
A
Uni ts
mW
O_C/W
O_C
O_C
SERIES
STAD-DEC.07.2007
BAS116
BAW156
BAV170
BAV199
PAGE . 1