BAS116 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Low-leakage diode

DATA SHEET
BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
SOT- 23
FEATURES
• Suface mount package ideally suited for automatic insertion.
• Very low leakage current. 2pA typical at VR=75V.
• Low capacitance. 2pF max at VR=0V, f=1MHz
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
.119(3.00)
.110(2.80)
MECHANICAL DATA
• Case: SOT-23 plastic
• Terminals: Solderable per MIL-STD-202G, Method 208
• Approx weight: 0.008 gram
• Marking: BAS116: P1,BAW156:P4,BAV170:P3,BAV199:P2
.083(2.10)
.066(1.70)
.006(.15)MAX
.020(.50)
.013(.35)
Unit: inch (mm)
.006(.15)
.002(.05)
ABSOLUTE RATINGS (each diode)
R e ve rse V o lta g e
PA R A M E TE R
P e a k R e ve rse V o lta g e
C o ntinuo us F o rw a rd C urre nt
N o n-re p e titive P e a k F o rw a rd S urg e C urre nt a t t= 1 .0 us
S ym b o l
VR
V RM
IF
I FS M
V a lue
75
100
0 .2
2 .0
U nits
V
V
A
A
THERMAL CHARACTERISTICS
PA R A M E TE R
P o w e r D issip a tio n (N o te 1 )
T he rm a l R e sista nce , Junctio n to A m b ie nt (N o te 1 )
Junctio n Te m p e ra ture
S to ra g e Te m p e ra ture
S ym b o l
P TO T
R θJA
TJ
TS TG
V a lue
250
500
-5 5 to 1 5 0
-5 5 to 1 5 0
U nits
mW
O _{C /W}
O_C
O_C
NOTE:
1. FR-5 Board = 1.0 x 0.75 x 0.062 in.
SINGLE
3
COMMON ANODE
3
COMMON CATHODE
3
SERIES
3
1
2
BAS116
1
2
BAW156
1
2
BAV170
1
2
BAV199
STAD-NOV.15.2004
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