3EZ11 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)

DATA SHEET
3EZ11~3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE- 11 to 200 Volts Power - 3.0 Watts
FEATURES
• Low profile package
• Built-in strain relief
• Glass passivated iunction
• Low inductance
• Typical I_D less than 1.0µA above 11V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
DO-15
MECHANICAL DATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes positive end (cathode)
Standard packing: 52mm tape
Weight: 0.015 ounce, 0.04 gram
Unit: inch ( mm )
.034(.86)
.028(.71)
.140(3.6)
.104(2.6)
MAXIMUM5RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Pwak Pulse Power Dissipation on TA=50°C (Notes A)
Derate above 70°C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOLS
PD
IFSM
VALUE
3.0
24.0
15
TJ, TSTG -55 to +150
UNITS
Watts
mW / °C
Amps
°C
NOTES:
A.Mounted on 5.0mm2 (.013mm thick) land areas.
B.Measured on8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum
DATE : OCT.11.2002
PAGE . 1