2SB1427W6 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – PNP Low Vce(sat) Transistor

P2SB1427W6
PNP Low Vce(sat) Transistor
Voltage
20V
Current
3A
Features
 Silicon PNP epitaxial type
 Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA
 High collector current capability
 Excellent DC current gain characteristics
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 6L-1 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0005 ounces, 0.014 grams
 Marking: B27
SOT-23 6L-1
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Power Dissipation
Operating Junction and Storage Temperature Range
Typical Thermal Resistance from Junction to Ambient ^{(Note )}
Note: Mounted on FR4 PCB at 1 inch square copper pad.
February 25,2015-REV.03
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_D
T_J,T_STG
R_θJA
LIMIT
-20
-20
-7
-3
-5
-0.3
1.2
-55~150
104
UNITS
V
V
V
A
A
A
W
o_C
o_C/W
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