2N7002_14 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

2N7002
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R , V @10V,I @500mA=5
DS(ON) GS
DS
• R_DS(ON), V_GS@4.5V,I_DS@75mA=7.5
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case : SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight : 0.0003 ounces, 0.008 grams
• Marking : S72
0.120(3.04)
0 . 11 0 ( 2 . 8 0 )
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
Maximum Ratings and Thermal Characteristics (T =25OC unless otherwise noted )
A
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{1 )}
Maximum Power Dissipation
O p e r a t i ng J unc t i o n a nd S t o r a g e Te m p e r a t ur e Ra ng e
T_A =25^O C
T_A =75^O C
Junction-to Ambient Thermal Resistance(PCB mounted)²
S ym b o l
V_{D S}
V_GS
I_D
I_{D M}
P_D
T_J ,T_{S TG}
R_{θJ A}
Limit
60
+20
250
1300
350
210
-55 to + 150
357
Uni ts
V
V
mA
mA
mW
O_C
O _{C /W}
Note:1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
August 29,2013-REV.03
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