2N7002_09 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

2N7002
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@500mA=5Ω
• R_DS(ON), V_GS@4.5V,I_DS@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : S72
3
1
2
Drain
Gate
Source
Maximum Ratings and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{1 )}
Maximum Power Dissipation
O p e r a t i ng J unc t i o n a nd S t o r a g e Te m p e r a t ur e Ra ng e
T_A =25^O C
T =75^OC
A
Junction-to Ambient Thermal Resistance(PCB mounted)²
S ym b o l
V_{D S}
V_GS
I_D
I_{D M}
P_D
T_J ,T_{S TG}
R_{θJ A}
Limit
60
+20
250
1300
350
210
-55 to + 150
357
Uni ts
V
V
mA
mA
mW
O_C
O _{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.1-FEB.3.2009
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